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GaAs FET
CFY 30
________________________________________________________________________________________________________
Datasheet
* Low noise ( Fmin = 1.4 dB @ 4 GHz ) * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (tape and reel)
Pin Configuration 1 2 3 4
Package 1)
CFY 30
A2
Q62703-F97 S
D
S
G
SOT-143
Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 70C) 2) Thermal resistance Channel-soldering point 2)
Symbol
Value 5 7 -4 ... +0.5 80 150 -40...+150 250
Unit V V V mA C C mW
VDS VDG VGS ID TCh Tstg Ptot
RthChS
<320
K/W
1) Dimensions see chapter Package Outlines 2) TS is measured on the source 1 lead at the soldering point to the PCB.
Siemens Aktiengesellschaft
pg. 1/6
11.01.1996 HL EH PD 21
GaAs FET
CFY 30
________________________________________________________________________________________________________
Electrical characteristics at TA = 25C, unless otherwise specified
Characteristics Drain-source saturation current
V = 3.5 V,
DS
Symbol
min
typ
max
Unit mA
V =0V
GS
IDSS VGS(P) gm IG F
20
50
80 V
Pinch-off voltage
V = 3.5 V
DS
I = 1 mA
D
-0.5
-1.3
-4.0 mS
Transconductance
V = 3.5 V
DS
I = 15 mA
D
20
30
A
Gate leakage current
V = 3.5 V
DS
I = 15 mA
D
-
0.1
2 dB
Noise figure
V = 3.5 V
DS
I = 15 mA
D
f = 4 GHz f = 6 GHz
-
1.4 2.0
1.6 dB
Associated gain
V = 3.5 V
DS
Ga
f = 4 GHz f = 6 GHz
I = 15 mA
D
10 -
11.5 8.9
dB
Maximum available gain
V = 3.5 V
DS
MAG
f = 6 GHz
I = 15 mA
D
-
11.2
dB
Maximum stable gain
V = 3.5 V
DS
MSG
f = 4 GHz
I = 15 mA
D
-
14.4
dBm
Power output at 1 dB compression
V =4V
DS
P1 dB
16 -
I = 30 mA
D
f = 6 GHz
Siemens Aktiengesellschaft
pg. 2/6
11.01.1996 HL EH PD 21
GaAs FET
CFY 30
________________________________________________________________________________________________________
Typical Common Source Noise Parameters
ID = 15 mA VDS = 3.5 V opt MAG 0.72 0.64 0.46 0.31 0.34 0.41 ANG 27 61 101 153 -133 -93 Z0 = 50
f GHz 2 4 6 8 10 12
Fmin dB 1.0 1.4 2.0 2.5 3.0 3.5
Ga dB 15.5 11.5 8.9 7.1 5.8 5.0
Rn 49 29 19 9 14 28
N 0.17 0.17 0.30 0.31 0.38 0.42
F50 dB 2.9 2.7 2.8 2.8 3.4 4.1
G(F50 ) dB 10.0 9.3 7.5 6.4 4.2 2.9
Total Power Dissipation Ptot = f (TS;TA)
300 P
to t
[ mW ]
200
TS TA
100
0 0 50 100 150 T A ; T S [ C ]
Siemens Aktiengesellschaft
pg. 3/6
11.01.1996 HL EH PD 21
GaAs FET
CFY 30
________________________________________________________________________________________________________
Output characteristics ID = f (VDS)
50 VGS =0V
ID [mA] 40
V =-0.2V GS
VGS=-0.4V 30 VGS=-0.6V
20 VGS =-0.8V
VGS =-1.0V 10 V GS =-1.2V VGS =-1.4V 0 0 1 2 3 VDS [V] 4 5
Siemens Aktiengesellschaft
pg. 4/6
11.01.1996 HL EH PD 21
GaAs FET
Typical Common Source S-Parameters
ID = 15 mA
f GHz 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 8.4 8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0 Mag 1.00 1.00 0.99 0.98 0.97 0.96 0.93 0.90 0.87 0.83 0.80 0.77 0.74 0.70 0.66 0.63 0.60 0.57 0.55 0.54 0.53 0.54 0.55 0.56 0.57 0.58 0.59 0.60 0.61 0.62 0.62 S11 Ang -1 -6 -14 -21 -28 -36 -44 -53 -62 -72 -82 -92 -104 -115 -127 -139 -150 -162 -174 172 160 147 135 124 114 106 98 91 85 79 74 Mag 2.43 2.43 2.43 2.43 2.44 2.45 2.47 2.49 2.50 2.50 2.50 2.51 2.49 2.45 2.41 2.36 2.30 2.24 2.19 2.14 2.08 2.00 1.92 1.83 1.72 1.61 1.51 1.42 1.35 1.30 1.25
CFY 30
________________________________________________________________________________________________________
UD = 3.5 V
S21 Ang 178 171 162 154 145 137 129 120 111 102 93 83 73 64 54 45 37 27 17 8 -2 -11 -21 -30 -40 -48 -56 -62 -69 -75 -81 Mag
Z0 = 50
S12 Ang 87 23 78 72 66 60 55 50 45 39 32 25 18 12 6 0 -6 -11 -17 -22 -27 -32 -37 -42 -46 -50 -53 -56 -58 -60 -63 Mag 0.70 0.69 0.68 0.67 0.66 0.65 0.64 0.62 0.60 0.57 0.54 0.50 0.46 0.43 0.40 0.36 0.31 0.27 0.24 0.21 0.19 0.18 0.18 0.19 0.21 0.23 0.26 0.29 0.32 0.34 0.36 0.003 0.010 0.020 0.030 0.040 0.050 0.058 0.066 0.074 0.082 0.090 0.097 0.103 0.108 0.112 0.114 0.115 0.116 0.116 0.116 0.115 0.113 0.111 0.109 0.107 0.104 0.102 0.101 0.099 0.098 0.096 S22 Ang -1 -5 -11 -15 -20 -26 -30 -35 -41 -47 -54 -61 -67 -73 -80 -88 -98 -110 -122 -137 -154 -173 171 155 141 128 118 108 100 93 85
Siemens Aktiengesellschaft
pg. 5/6
11.01.1996 HL EH PD 21
GaAs FET
Typical Common Source S-Parameters
ID = 30 mA
f GHz 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 8.4 8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0 Mag 1.00 1.00 0.99 0.97 0.95 0.92 0.90 0.87 0.83 0.79 0.75 0.71 0.67 0.63 0.60 0.57 0.54 0.52 0.51 0.50 0.50 0.51 0.52 0.54 0.55 0.57 0.59 0.60 0.61 0.62 0.62 S11 Ang -2 -8 -16 -24 -32 -40 -48 -58 -68 -79 -91 -102 -114 -126 -138 -150 -162 -174 173 160 147 135 125 115 107 99 91 85 79 73 68 Mag 3.23 3.21 3.19 3.18 3.17 3.17 3.17 3.17 3.16 3.12 3.08 3.04 3.00 2.95 2.87 2.77 2.68 2.58 2.50 2.43 2.36 2.26 2.15 2.04 1.93 1.82 1.71 1.60 1.51 1.44 1.38
CFY 30
________________________________________________________________________________________________________
UD = 3.5 V
S21 Ang 178 171 162 153 143 135 127 119 109 99 88 78 68 58 49 40 31 22 14 5 -4 -13 -22 -30 -39 -47 -54 -62 -69 -75 -82 Mag
Z0 = 50
S12 Ang 85 79 73 70 65 61 56 50 45 40 34 28 21 15 10 4 -1 -6 -11 -16 -20 -24 -29 -33 -37 -41 -44 -47 -49 -52 -55 Mag 0.71 0.70 0.69 0.67 0.66 0.65 0.63 0.61 0.58 0.55 0.52 0.50 0.47 0.43 0.38 0.34 0.30 0.27 0.24 0.21 0.18 0.16 0.16 0.17 0.19 0.22 0.25 0.27 0.30 0.32 0.34 S22 Ang -1 -6 -11 -16 -21 -26 -31 -36 -42 -48 -54 -60 -66 -73 -81 -89 -99 -109 -121 -134 -148 -164 176 158 142 128 118 109 100 92 85
0.002 0.009 0.017 0.025 0.034 0.042 0.051 0.059 0.067 0.073 0.079 0.084 0.089 0.092 0.094 0.096 0.097 0.098 0.099 0.099 0.099 0.099 0.099 0.099 0.099 0.099 0.100 0.101 0.102 0.103 0.104
Siemens Aktiengesellschaft
pg. 6/6
11.01.1996 HL EH PD 21

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